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Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
Publication date: Available online 2 June 2018Source: Progress in Crystal Growth and Characterization of MaterialsAuthor(s): M. Zajac, R. Kucharski, K. Grabianska, A. Gwardys-Bak, A. Puchalski, D. Wasik, E. Litwin-Staszewska, R. Piotrzkowski, J. Z Domagala, M. BockowskiAbstractRecent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. Crysta...
Source: Progress in Crystal Growth and Characterization of Materials - July 5, 2018 Category: Chemistry Source Type: research

Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
Publication date: Available online 2 June 2018 Source:Progress in Crystal Growth and Characterization of Materials Author(s): M. Zajac, R. Kucharski, K. Grabianska, A. Gwardys-Bak, A. Puchalski, D. Wasik, E. Litwin-Staszewska, R. Piotrzkowski, J. Z Domagala, M. Bockowski Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. ...
Source: Progress in Crystal Growth and Characterization of Materials - June 2, 2018 Category: Chemistry Source Type: research

Solution combustion synthesis, energy and environment: Best parameters for better materials
Publication date: June 2018 Source:Progress in Crystal Growth and Characterization of Materials, Volume 64, Issue 2 Author(s): Francesca Deganello, Avesh Kumar Tyagi Solution combustion synthesis (SCS) is a worldwide used methodology for the preparation of inorganic ceramic and composite materials with controlled properties for a wide number of applications, from catalysis to photocatalysis and electrocatalysis, from heavy metal removal to sensoristics and electronics. The high versatility and efficiency of this technique have led to the introduction of many variants, which allowed important optimization to the prepare...
Source: Progress in Crystal Growth and Characterization of Materials - May 24, 2018 Category: Chemistry Source Type: research

Synthesis and characterization of electrical features of bismuth manganite and bismuth ferrite: effects of doping in cationic and anionic sublattice: Materials for applications
Publication date: Available online 17 March 2018 Source:Progress in Crystal Growth and Characterization of Materials Author(s): A. Molak, D.K. Mahato, A.Z. Szeremeta The electrical, magnetic, and structural features of bismuth manganite (BM), e.g., BiMnO3, and bismuth ferrite (BF), e.g., BiFeO3, are reviewed. Induced multiferroicity and enhanced magnetoelectric coupling are required for various modern device applications. BM and BF were synthesized using standard high-temperature sintering and processes such as sol–gel, hydrothermal, or wet chemical methods combined with annealing. The size and morphology of the nan...
Source: Progress in Crystal Growth and Characterization of Materials - March 19, 2018 Category: Chemistry Source Type: research

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Publication date: Available online 14 November 2017 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Qiang Li, Kei May Lau Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosph...
Source: Progress in Crystal Growth and Characterization of Materials - November 15, 2017 Category: Chemistry Source Type: research

Synthesis of inorganic and organic crystals mediated by proteins in different biological organisms. A mechanism of biomineralization conserved throughout evolution in all living species
Publication date: Available online 21 July 2017 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Mayra Cuéllar-Cruz The synthesis of crystals through biomineralization is a process of protection and support preserved in animals, protists, moneras, plants and fungi. The genome of every species has evolved to preserve and/or modify the formation of one or another type of crystal, which may be of the organic or inorganic type. The most common inorganic crystals identified in organisms include calcium carbonate (CaCO3), calcium phosphate (CaP), calcium oxalate (CaOx), magnetite or greigite, an...
Source: Progress in Crystal Growth and Characterization of Materials - July 22, 2017 Category: Chemistry Source Type: research

Lifting the mist of flatland: The recent progress in the characterizations of two-dimensional materials
Publication date: Available online 20 June 2017 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Mengjian Zhu, Kun Huang, Kai-Ge Zhou In the great adventure of two-dimensional (2D) materials, the characterization techniques are the lighthouse to guide the investigators across heavy mist and submerged reef. In this review, we highlight the recent achievements in the characterization of the 2D materials. Firstly, the methods to identify the fundamental properties of the 2D materials are introduced. Then, the specific characterization techniques for analyzing electric, optical and chemical p...
Source: Progress in Crystal Growth and Characterization of Materials - June 21, 2017 Category: Chemistry Source Type: research

Crystal growth of inorganic, organic, and biological macromolecules in gels
Publication date: Available online 9 June 2017 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Abel Moreno, María J. Rosales-Hoz (Source: Progress in Crystal Growth and Characterization of Materials)
Source: Progress in Crystal Growth and Characterization of Materials - June 10, 2017 Category: Chemistry Source Type: research

Germanium based photonic components toward a full silicon/germanium photonic platform
Publication date: Available online 20 May 2017 Source:Progress in Crystal Growth and Characterization of Materials Author(s): V. Reboud, A. Gassenq, J.M. Hartmann, J. Widiez, L. Virot, J. Aubin, K. Guilloy, S. Tardif, J.M. Fédéli, N. Pauc, A. Chelnokov, V. Calvo Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the fie...
Source: Progress in Crystal Growth and Characterization of Materials - May 20, 2017 Category: Chemistry Source Type: research

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN
In this study we have used plasma-assisted molecular beam epitaxy (PA-MBE) and have produced for the first time free-standing layers of zinc-blende GaN up to 100μm in thickness and up to 3-inch in diameter. We have shown that our newly developed PA-MBE process for the growth of zinc-blende GaN layers can also be used to achieve free-standing wurtzite AlxGa1-xN wafers. Zinc-blende and wurtzite AlxGa1-xN polytypes can be grown on different orientations of GaAs substrates - (001) and (111)B respectively. We have subsequently removed the GaAs using a chemical etch in order to produce free-standing GaN and AlxGa1-xN wafers. At...
Source: Progress in Crystal Growth and Characterization of Materials - April 26, 2017 Category: Chemistry Source Type: research

High-precision quantitative atomic-site-analysis of functional dopants in crystalline materials by electron-channelling-enhanced microanalysis
Publication date: Available online 9 March 2017 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Shunsuke Muto, Masahiro Ohtsuka Knowledge of the location and concentration of impurity atoms doped into a synthesized material is of great interest to investigate the effect of doping. This would usually be investigated using X-ray or neutron diffraction methods in combination with Rietveld analysis. However, this technique requires a large-scale facility such as a synchrotron radiation source and nuclear reactor, and can sometimes fail to produce the desired results, depending on the constitu...
Source: Progress in Crystal Growth and Characterization of Materials - March 9, 2017 Category: Chemistry Source Type: research

Spray pyrolysis deposition of undoped SnO2 and In2O3 films and their structural properties
Publication date: Available online 12 January 2017 Source:Progress in Crystal Growth and Characterization of Materials Author(s): G. Korotcenkov, B.K. Cho In this paper the results of structural analysis of the SnO2 and In2O3 films deposited by spray pyrolysis are presented. The main goals of this analysis are summarizing the results obtained in this field, highlighting a correlation between parameters of film deposition and the material structure and formulating some general regularities, typical for metal oxides. Peculiarities and mechanisms of pyrosol deposition as well as advantages and disadvantages of this techno...
Source: Progress in Crystal Growth and Characterization of Materials - January 12, 2017 Category: Chemistry Source Type: research

Atomic layer deposition of high-k dielectrics on III –V semiconductor surfaces
Publication date: Available online 2 December 2016 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Theodosia Gougousi The goal of this article is to provide an overview of the state of knowledge regarding the Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An introduction to ALD, the band structure, various defects present on the III–V surface and how they relate to Fermi level pinning are discussed. Surface passivation approaches are examined in detail in conjunction with experimental and computational results. The “interface clean-up” reaction that ...
Source: Progress in Crystal Growth and Characterization of Materials - December 2, 2016 Category: Chemistry Source Type: research

Spring and parachute: How cocrystals enhance solubility
This article is intended to combine literature on cocrystallization – a tool for enhancing the solubility and for improving the physicochemical properties of an API (an API is the molecule which is responsible for providing the therapeutic effect) with special emphasis on the mechanism responsible for the same. The pharmaceutical industries are witnessing a developing crisis in the process of drug development due to the increasing cost of their R&D departments, the failure of some blockbuster drug candidates exhibiting poor aqueous solubility and the unavailability of newer molecules because of patent limitations...
Source: Progress in Crystal Growth and Characterization of Materials - August 4, 2016 Category: Chemistry Source Type: research

Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides
Publication date: Available online 28 July 2016 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Swee Liang Wong, Hongfei Liu, Dongzhi Chi Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have received significant attention recently due to their unique properties such as a transition from indirect to direct band gap when thinned down to a monolayer and also valley-dependent photoluminescence. In addition, being a semiconductor with considerable mobility, it has been touted as a candidate in next generation electronics. However, a major hurdle to its implementation is the...
Source: Progress in Crystal Growth and Characterization of Materials - July 28, 2016 Category: Chemistry Source Type: research