The influence of residual GaN on two-step-grown GaN on sapphire

Publication date: 15 November 2021Source: Materials Science in Semiconductor Processing, Volume 135Author(s): Liyuan Peng, Shuangtao Liu, Jing Yang, Degang Zhao, Feng Liang, Ping Chen, Zongshun Liu
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research