Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Publication date: 15 November 2021Source: Materials Science in Semiconductor Processing, Volume 135Author(s): Cong Wang, Yu-Chen Wei, Xiao Tan, Luqman Ali, Chang-Qiang Jing
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research