Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition

Publication date: 25 November 2021Source: Journal of Alloys and Compounds, Volume 883Author(s): Gavax Joshi, Yogesh Singh Chauhan, Amit Verma
Source: Journal of Alloys and Compounds - Category: Chemistry Source Type: research
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