Injection enhanced SiC planar gate IGBT with partial Schottky contact emitter
Publication date: 1 November 2021Source: Materials Science in Semiconductor Processing, Volume 134Author(s): Jinping Zhang, Yuanyuan Tu, Junyi Luo, Zhenfeng Peng, Xiaochuan Deng, Bo Zhang
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research
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