Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Publication date: 1 November 2021Source: Materials Science in Semiconductor Processing, Volume 134Author(s): Muhammad Saddique Akbar Khan, Hui Liao, Guo Yu, Imran Iqbal, Menglai Lei, Rui Lang, Zehan Mi, Huanqing Chen, Hua Zong, Xiaodong Hu
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research