Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals
Publication date: September 2021Source: Materials Science and Engineering: B, Volume 271Author(s): Tuerxun Ailihumaer, Hongyu Peng, Fumihiro Fujie, Balaji Raghothamachar, Michael Dudley, Shunta Harada, Toru Ujihara
Source: Materials Science and Engineering: B - Category: Materials Science Source Type: research
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