Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode

Publication date: September 2021Source: Materials Science and Engineering: B, Volume 271Author(s): Khaled Humood, Sueda Saylan, Maguy Abi Jaoude, Baker Mohammad, Florent Ravaux
Source: Materials Science and Engineering: B - Category: Materials Science Source Type: research