Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer

Publication date: October 2021Source: Materials Science in Semiconductor Processing, Volume 133Author(s): Makoto Miyoshi, Akiyoshi Inoue, Mizuki Yamanaka, Hiroki Harada, Takashi Egawa
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research