Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate
Publication date: August 2021Source: Materials Science and Engineering: B, Volume 270Author(s): Matthew Whiteside, Subramaniam Arulkumaran, Geok Ing Ng
Source: Materials Science and Engineering: B - Category: Materials Science Source Type: research
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