MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3

Publication date: June 2021Source: Results in Physics, Volume 25Author(s): Armando Hernandez, Md Minhazul Islam, Pooneh Saddatkia, Charles Codding, Prabin Dulal, Sahil Agarwal, Adam Janover, Steven Novak, Mengbing Huang, Tuoc Dang, Mike Snure, F.A. Selim

Source: Results in Physics - May 11, 2021 Category: Physics Source Type: research