Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC

Publication date: 15 August 2021Source: Materials Science in Semiconductor Processing, Volume 131Author(s): F. Triendl, G. Pfusterschmied, G. Pobegen, S. Schwarz, W. Artner, J.P. Konrath, U. Schmid
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research