The role of AlGaN/GaN heterostructure properties in barrier height variation of Au-free ohmic contacts

Publication date: July 2021Source: Materials Science in Semiconductor Processing, Volume 129Author(s): Aurore Constant, Elke Claeys, Joris Baele, Peter Coppens, Freddy De Pestel
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research