The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique

Publication date: Available online 14 December 2020Source: Materials Research BulletinAuthor(s): A.S. Yusof, Z. Hassan, S.S Ng, M.A. Ahmad, M.A.A.Z. Md Sahar, S.O.S. Hamady, C. Chevallier
Source: Materials Research Bulletin - Category: Materials Science Source Type: research