The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

Publication date: Available online 9 December 2020Source: Physica E: Low-dimensional Systems and NanostructuresAuthor(s): Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yongxiong Yang, Yang Liu

Source: Physica E: Low dimensional Systems and Nanostructures - December 9, 2020 Category: Nanotechnology Source Type: research