Germanium: Epitaxy and its applications

Publication date: September–December 2010 Source:Progress in Crystal Growth and Characterization of Materials, Volume 56, Issues 3–4 Author(s): Matteo Bosi , Giovanni Attolini This paper reviews the most important properties of germanium, gives an insight into the newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on some applications of this material, with a special emphasis on recent achievements in electronics and photovoltaics. We will highlight the recent development of Ge research and will give an account of the most important Ge applications that emerged in the last two decades. Germanium is a key material in modern material science and society: it is used as a dopant in fiber optic glasses and in semiconductor devices, both in activating conduction in layers and also as a substrate for III–V epitaxy. Ge is also widely used in infrared (IR) detection and imaging and as a polymerization catalyst for polyethylene terephthalate (PET). Moreover, high-speed electronics for cell phone communications relies heavily on SiGe alloys. Ge electronics is nowadays gaining new interest because of the enhanced electronic properties of this material compared to standard silicon devices, but the lack of a suitable gate oxide still limits its development. High efficiency solar cells, mainly for space use but also for terrestrial solar concentration have surpassed 40% efficiency and Ge has a lead role in achieving this goal. The main focus o...

Source: Progress in Crystal Growth and Characterization of Materials - October 12, 2014 Category: Chemistry Source Type: research