Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

Publication date: Available online 13 November 2018Source: Progress in Crystal Growth and Characterization of MaterialsAuthor(s): Oliver Supplie, Oleksandr Romanyuk, Christian Koppka, Matthias Steidl, Andreas Nägelein, Agnieszka Paszuk, Lars Winterfeld, Anja Dobrich, Peter Kleinschmidt, Erich Runge, Thomas HannappelAbstractThe integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tremendous advances in Si preparation in hydrogen-based metalorganic vapor phase epitaxy (MOVPE) environment, III–V nucleation and subsequent heteroepitaxial layer growth. Simultaneously, MOVPE itself took off in its triumphal course in solid state lighting production demonstrating its power as industrially relevant growth technique. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of in situ, in system and ex situ characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V s...
Source: Progress in Crystal Growth and Characterization of Materials - Category: Chemistry Source Type: research