A diode based on a chemically-doped SWCNT

Publication date: October 2018Source: New Carbon Materials, Volume 33, Issue 5Author(s): Chuan-juan SONG, Jun-ru YANG, Cheng-hao LIAO, Xiao-dong LIU, Ying WANG, Rong HE, Xu-sheng DONG, Han-qing ZHONG, Yi-jian LIU, Li-ying ZHANG, Chang-xin CHENAbstractCarbon nanotube p-n junction diodes are expected to be the building block of next generation integrated circuits. A p-i-n junction diode was prepared from a SWCNT with one end p-type doped, the other end n-type doped and the middle segment undoped. The p-type doping was performed using triethyloxonium hexachloroantimonate to form an air stable charge transfer complex (SWCNT+-SbCl6−) while polyethylene imine was used as an electron donor for the n-type doping. The device showed an excellent performance with a high rectification ratio of 103 and a low reverse saturation current of 23 pA.Graphical abstractThe physical structure of the device is analogous to an intra-tube p-i-n junction diode, resulting in a strong builtin electric field in SWCNTs.
Source: New Carbon Materials - Category: Chemistry Source Type: research