Influence of Temperature on Surface Morphology and Photoelectric Performance of CuAlO2 Thin Films

Publication date: October 2018Source: Chinese Journal of Analytical Chemistry, Volume 46, Issue 10Author(s): Chen CHEN, Rui-Xin SHI, Chuan-Tao ZHENG, Yi-Ding WANGAbstractCuAlO2 thin films were prepared on sapphire substrate by sol-gel method. The influences of annealing temperature, heating rates and annealing time on composition, morphology and photoelectric performance of film were investigated. The results of X-ray power diffraction, scanning electron microscope, transmissivity, and hall parameter tests showed that the CuAlO2 phase was relatively pure when the annealing temperature was above 950 °C. The higher the temperature, the higher the peak position. Under the optimal conditions, CuAlO2 film exhibited the best transmittance (90%) and the highest conductivity (1.23 S cm−1). On this basis, increasing the heating rate and annealing time was in favor of enlarging the size of the particles and the film grain growth direction tended to be unified.Graphical abstractCuAlO2 thin films were prepared on sapphire substrate by sol-gel method. The transmittance of the CuAlO2 thin film reached 90% around 3000 nm, and its electric conductivity was 1.23 S cm−1 at annealing temperature of 950 °C. The crystalline grain size of the thin film increased from 67 nm to 126 nm with increasing heating rate, and the crystalline grain size of the thin film increased from 107 nm to 420 nm when the annealing time was extended.

Source: Chinese Journal of Analytical Chemistry - October 17, 2018 Category: Chemistry Source Type: research