Conductive nitrides: Growth principles, optical and electronic properties, and their perspectives in photonics and plasmonics

Publication date: January 2018 Source:Materials Science and Engineering: R: Reports, Volume 123 Author(s): P. Patsalas, N. Kalfagiannis, S. Kassavetis, G. Abadias, D.V. Bellas, Ch. Lekka, E. Lidorikis The nitrides of most of the group IVb-Vb-VIb transition metals (TiN, ZrN, HfN, VN, NbN, TaN, MoN, WN) constitute the unique category of conductive ceramics. Having substantial electronic conductivity, exceptionally high melting points and covering a wide range of work function values, they were considered for a variety of electronic applications, which include diffusion barriers in metallizations of integrated circuits, Ohmic contacts on compound semiconductors, and thin film resistors, since early eighties. Among them, TiN and ZrN are recently emerging as significant candidates for plasmonic applications. So the possible plasmonic activity of the rest of transition metal nitrides (TMN) emerges as an important open question. In this work, we exhaustively review the experimental and computational (mostly ab initio) works in the literature dealing with the optical properties and electronic structure of TMN spanning over three decades of time and employing all the available growth techniques. We critically evaluate the optical properties of all TMN and we model their predicted plasmonic response. Hence, we provide a solid understanding of the intrinsic (e.g. the valence electron configuration of the constituent metal) and extrinsic (e.g. point defects and microstructure) f...

Source: Materials Science and Engineering: R: Reports - February 3, 2018 Category: Materials Science Source Type: research