High power (60 mW) GaSb-based 1.9  μm superluminescent diode with cavity suppression element

Thecharacteristics and the fabrication of a 1.9  μm superluminescentdiode utilizing a cavity suppression element are reported. The strong suppression of reflections allows the device to reach high gain without any sign of lasing modes. The high gain enables strong amplifiedspontaneous emission and output power up to 60 mW in a single transverse mode. At high gain, thespectrum is centered around 1.9  μm and the full width at half maximum is as large as 60  nm. The power andspectralcharacteristics pave the way for demonstrating compact and efficient light sources for spectroscopy. In particular, the light source meets requirements for coupling tosilicon waveguides and fills a need for leveraging to mid-IR applications photonics integration circuit concepts exploiting hybrid integration tosilicon technology.

Source: Applied Physics Letters - December 6, 2016 Category: Physics Authors: Nouman Zia, Jukka Viheri älä, Riku Koskinen, Antti Aho, Soile Suomalainen and Mircea Guina Source Type: research