Demonstration of flexible thin film transistors with GaN channels

We report on thethin film transistors(TFTs) withGallium Nitride(GaN) channels directly fabricated on flexible substrates.GaNthin films aregrown by hollow cathode plasma assistedatomic layer deposition (HCPA-ALD) at 200  °C.TFTs exhibit 103 on-to-off current ratios and are shown to exhibit propertransistor saturation behavior in their output characteristics. Gate bias stress tests reveal that flexibleGaNTFTs have extremely stable electrical characteristics. Overall fabrication thermal budget is below 200  °C, the lowest reported for theGaN basedtransistors so far.

Source: Applied Physics Letters - December 6, 2016 Category: Physics Authors: S. Bolat, Z. Sisman and A. K. Okyay Source Type: research