Characterization of Mg and Fe doped Sb2Se3 thin films for photovoltaic application

Sb2Se3 holds a great potential for low-cost thin film photovoltaics because of its very attractivematerial and optoelectronicproperties, and the demonstrated 5.6% certified efficiency and decentdevice stability. A full understanding of the influence of external impurities on theproperties ofSb2Se3 films would help the further improvement ofSb2Se3solar cells. In this work, we carefully characterized theMg and Fedoping inSb2Se3 films. Both Kelvin probe force microscope and Hallmeasurements revealed thatMg was largely inert while Fe introduced the n-typedoping.Temperature-dependentconductivity and admittance further demonstrated that Fedoping introduced twodefect levels within the bandgap with their positions ∼0.3 eV and ∼0.4 eV below the conduction band. We caution that iron contamination should be minimized for high efficiencySb2Se3solar cells.
Source: Applied Physics Letters - Category: Physics Authors: Source Type: research
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