Self-modulated field electron emitter: Gated device of integrated Si tip-on-nano-channel

We report the featured gatedfield electron emission devices of Si nano-tips with individually integrated Si nano-channels and the interpretation of the related physics. A rational procedure was developed tofabricate the uniform integrated devices. The electrical and thermal conduction tests demonstrated that the Si nano-channel can limit both the current and heat flows. The integrated devices showed the specialties of self-enhancement and self-regulation. The heatresistance results in the heat accumulation at the tip-apex, inducing the thermally enhancedfield electron emission. The self-regulated effect of theelectrical resistance is benefit for impeding the current overloading and prevents the emitters from a catastrophic breakdown. The nano-channel-integrated Si nano-tip array exhibited emissioncurrent density up to 24.9  mA/cm2 at a gate voltage of 94  V, much higher than that of the Si nano-tip array without an integrated nano-channel.

Source: Applied Physics Letters - December 5, 2016 Category: Physics Authors: Zhijun Huang, Yifeng Huang, Zhangxu Pan, Juncong She, Shaozhi Deng, Jun Chen and Ningsheng Xu Source Type: research