Heterogeneously integrated III –V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

We report on 2.3xμm wavelength InP-based type-II distributed feedback(DFB) lasers heterogeneously integrated on asiliconphotonics integrated circuit. In the devices, a III –Vepitaxial layer stack with a “W”-shaped InGaAs/GaAsSb multi-quantum-well active region is adhesively bonded to the first-ordersiliconDFBgratings. Single mode laser emission coupled to a single modesiliconwaveguide with a side mode suppression ratio of 40  dB is obtained. In continuous-wave regime, the 2.32 μm laser operates close to room temperature (above 15  °C) and emits more than 1 mW output power with a threshold current density of 1.8 kA/cm2 at 5  °C. A tunable diode laserabsorption measurement of CO is demonstrated using this source.

Source: Applied Physics Letters - December 2, 2016 Category: Physics Authors: Ruijun Wang, Stephan Sprengel, Aditya Malik, Anton Vasiliev, Gerhard Boehm, Roel Baets, Markus-Christian Amann and Gunther Roelkens Source Type: research