Minority carrier recombination of ordered Ga0.51In0.49P at high temperatures

The minoritycarrier lifetime of high-quality ordered GaInP lattice matched toGaAs and the surface recombination velocity at its interface to AlInP weremeasured using time-resolved photo-luminescence in thetemperature range of77–500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over themeasuredtemperature range. The effective lifetime increased with atemperature up to around  300 K, and then decreased in the300–500 K range. The variations in the effective lifetime, caused by the variations in the bulk lifetime, are explained by considering the separate contributions of radiative and non-radiative recombination and their respectivetemperature dependencies.

Source: Applied Physics Letters - December 2, 2016 Category: Physics Authors: R. Dagan, Y. Rosenwaks, A. Kribus, A. W. Walker, J. Ohlmann and F. Dimroth Source Type: research