Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer

Back-gated MoSe2thin-film transistors(TFTs) with an Al2O3-capping layer were fabricated, and the devicecharacteristics of the MoSe2TFTs that are dependent on the Al2O3-capping-layerpassivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe2TFTs was negatively shifted with the Al2O3-capping layer. The on/off-current ratio of the MoSe2TFTs is approximately six decades regardless of the Al2O3-capping layer, but the field-effect mobility was greatly increased from 2.86  cm2/Vs to 10.26  cm2/Vs after thedeposition of the Al2O3-capping layer. According to the results of this study, the Al2O3-capping layer can enhance the devicecharacteristics of MoSe2TFTs.

Source: Applied Physics Letters - December 1, 2016 Category: Physics Authors: Hyunjea Lee, Ji Heon Kim and Cheol Jin Lee Source Type: research