Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes

Floating gate memory operations are demonstrated in a single-electron transistor (SET) fabricated by a chemical assembly using theAu nanogapelectrodes and the chemisorbedAunanoparticles. By applying pulse voltages to the control gate, phase shifts were clearly and stably observed both in the Coulomb oscillations and in the Coulombdiamonds. Writing and erasing operations on the floating gate memory were reproducibly observed, and thecharges on the floating gateelectrodes were maintained for at least 12  h. By considering thecapacitance of the floating gateelectrode, the number ofelectrons in the floating gateelectrode was estimated as 260. Owing to the stability of the fabricated SET, these writing and erasing operations on the floating gate memory can be applied to reconfigurable SET circuits fabricated by a chemically assembled technique.

Source: Applied Physics Letters - December 1, 2016 Category: Physics Authors: Yasuo Azuma, Masanori Sakamoto, Toshiharu Teranishi and Yutaka Majima Source Type: research