Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy

The evolution of oxidation/reduction states ofvanadium oxidethin film was monitoredin situ as a function of oxygen pressure andtemperature via ambient pressure X-ray photoemission spectroscopy. Spectra analysis showed that VO2 can begrown at a relatively low temperature, T  ∼ 523 K, and that V2O5 oxide develops rapidly at elevated oxygen pressure. Raman spectroscopy was applied to confirm the formation of VO2 oxide inside of thefilm. In addition, thetemperature-dependentresistivitymeasurement on thegrownthin film, e.g., 20  nm exhibited a desirable metal-insulator transition of VO2 with aresistivity change of ∼1.5 × 103 times at 349.3  K, displaying typical characteristics ofthick VO2film, e.g., 100  nm thick. Our results not only provide important spectroscopic information for the fabrication ofvanadium oxides, but also show that high quality VO2films can be formed at relatively low temperature, which is highly critical for engineering oxidefilm for heat-sensitive electronic devices.

Source: Journal of Applied Physics - November 30, 2016 Category: Physics Authors: Geonhwa Kim, Joonseok Yoon, Hyukjun Yang, Hojoon Lim, Hyungcheol Lee, Changkil Jeong, Hyungjoong Yun, Beomgyun Jeong, Ethan Crumlin, Jouhahn Lee, Jaeyoung Lee, Honglyoul Ju and Bongjin Simon Mun Source Type: research