In situ analysis of post-annealing effect on Sn-doped indium oxide films

Oxygen post-annealing effects on tin (Sn)doped indium oxide (ITO) film are investigated with various analytical tools as a function of temperature, includingin situXRD, ambient pressureXPS (AP-XPS), and Hall measurement. As the annealing temperature increases up to 200  °C under the oxygen pressure of 100 mTorr, thein situXRD shows the evidence ofcrystallization of the film while the AP-XPS reveals the formation of oxygenvacancy and Sn4+ states on surface. In addition, themobility of ITO thin film is increased as the post-annealing temperature increases, supporting the results of bothin situXRD and AP-XPS. The results of angle-resolvedXPS reveal that the degree of Sn segregation changes little after post-annealing procedure.

Source: Journal of Applied Physics - November 30, 2016 Category: Physics Authors: Hojoon Lim, Hyeok-Jun Yang, Ji Woong Kim, Jong-Seung Bae, Jin-Woo Kim, Beomgyun Jeong, Ethan Crumlin, Sungkyun Park and Bongjin Simon Mun Source Type: research