Molecular floating-gate organic nonvolatile memory with a fully solution processed core architecture

In this paper, we demonstrated a floating-gate organic thin film transistor based nonvolatile memory, in which the core architecture was processed by a sequential three-stepsolutionspin-coating method. The molecularsemiconductor 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pen) distributing in the matrix of polymer poly(styrene) (PS), acting as the floating-gate and tunneling layer, respectively, was processed by one-stepspin-coating from their blendingsolution. The effect of the proportion of TIPS-Pen in the matrix of PS on the memory performances ofdevices was researched. As a result, a good nonvolatile memory was achieved, with a memory window larger than 25  V, stable memory endurance property over 500 cycles and retention time longer than 5000 s with a high memory ratio larger than 102, at an optimal proportion of TIPS-Pen in the matrix of PS.

Source: Applied Physics Letters - November 30, 2016 Category: Physics Authors: Chao Wu, Wei Wang and Junfeng Song Source Type: research