Negative differential resistance in n-type noncompensated silicon at low temperature

We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9 –2.25 K and at electrical fields smaller than 1 V/cm, thenegative differential resistance(NDR) was observed. The externalmagnetic field enhances the region of theNDR. We attribute this effect to the delocalization of the D− states in the upper Hubbard band due to the accumulation of thecharge injected bycurrent.

Source: Applied Physics Letters - November 29, 2016 Category: Physics Authors: A. L. Danilyuk, A. G. Trafimenko, A. K. Fedotov, I. A. Svito and S. L. Prischepa Source Type: research