InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

We demonstrate a single channel III –V complementarymetal-oxide-semiconductor(CMOS)transistors by ultrathin body InAs/GaSb-on-insulator (-OI) channels on Si. The ultrathinInAs layers with the quantum confinement and tight gate-control of the identical InAs/GaSb-OI channel can realize III –VCMOS operation. The quantum well InAs/GaSb-OI on Sistructures with the proper thickness of theInAs andGaSb layers can allow us to operate both n-channel and p-channelmetal-oxide-semiconductor field-effecttransistors (n-MOSFETs and p-MOSFETs) with high channelmobilities in an identical InAs/GaSb-OItransistor. TheInAs thickness needs to be ≲2.5 nm forCMOS operation in the single channel InAs/GaSb-OIstructure.

Source: Applied Physics Letters - November 23, 2016 Category: Physics Authors: Masafumi Yokoyama, Haruki Yokoyama, Mitsuru Takenaka and Shinichi Takagi Source Type: research