On reduction of current leakage in GaN by carbon-doping

Carbon-doping is proposed to reduce the dislocation-mediatedleakage currents in theGaN buffer layers.GaN:C grown by metalorganic vapor phase epitaxy using propane shows excellent quality up to [C]  = 6.7 × 1018 cm−3. Locally probing dislocations bysurface scanning potentialmicroscopy reveal a transition from mostly neutral or weaklycharged regions to dominantly negativelycharged regions relative to the surrounding area at highdoping levels. A relation betweenleakage currents and the relative dislocationcharge state exists. Minimumleakage current is achieved if the dominantcharge state of dislocation regions becomes negative against the surrounding.

Source: Applied Physics Letters - November 22, 2016 Category: Physics Authors: Aqdas Fariza, Andreas Lesnik, J ürgen Bläsing, Marc P. Hoffmann, Florian Hörich, Peter Veit, Hartmut Witte, Armin Dadgar and André Strittmatter Source Type: research