Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

We report on the fabrication and electrical characterization of phase change memory (PCM) devices formed by In3Sb1Te2chalcogenide nanowires (NWs), with diameters as small as 20  nm. The NWs were self-assembled bymetal organic chemical vapor deposition via the vapor –liquid–solid method, catalyzed byAu nanoparticles. Reversible and well reproducible memory switching of the NWs between low and highresistance states was demonstrated. The conduction mechanism of the highresistance state was investigated according to a trap-limited model for electrical transport in theamorphous phase. The size of the amorphized portion of the NW and the critical electric field for the transition to the lowresistance state were evaluated. The In3Sb1Te2 NW-based devices showed very low working parameters, such as RESETvoltage ( ∼3 V),current ( ∼40 μA), and power ( ∼130 μW). Our results indicated that the studied NWs are suitable candidates for the realization of ultra-scaled, high performance PCM devices.
Source: Applied Physics Letters - Category: Physics Authors: Source Type: research