Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes

We experimentally study the electron transport through a single nanocrystallinesiliconquantum dot between the nanogapelectrodes. We fabricate the device bydepositing a nanocrystal into an ∼10-nm gap using a very high frequency plasma cell. The Coulombdiamond size depends on the number of electrons at 4.5  K, which indicates that even–odd shell filling occurs. The charging energy is estimated to be ∼11 meV, which is consistent with the size of thesilicon nanocrystal. The perpendicularmagnetic field dependence of the Coulombdiamonds demonstrates theZeeman splitting as well as orbital energy evolution.

Source: Applied Physics Letters - November 21, 2016 Category: Physics Authors: T. Sawada, T. Kodera and S. Oda Source Type: research