Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

Indiumzinc oxide (IZO),silicon containing IZO, and IZO/IZO:Si bilayerthin films have been prepared by dual radio frequency magnetronsputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability forthin film transistor(TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayerTFTs to study the effect offilm thickness,silicon incorporation, and bilayer active channel on device performance and negative biasillumination stress (NBIS) stability.TFTs with increasing single active IZO layer thickness exhibit decrease incarrier mobility but steady improvement in NBIS; the best values being μFE ∼ 27.0, 22.0 cm2/Vs and ΔVth ∼ −13.00, −6.75 V for a channel thickness of 7 and 27 nm, respectively. Whilesilicon incorporation is shown to reduce themobility somewhat, it raises the stability markedly ( ΔVth ∼ −1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer basedTFTs display useful characteristics (field effectmobility,μFE = 15.3 cm2/Vs and NBIS value, ΔVth =−0.75 V) for their application in transparent electronics.

Source: Applied Physics Letters - November 17, 2016 Category: Physics Authors: Ram Narayan Chauhan, Nidhi Tiwari, Po-Tsun Liu, Han-Ping D. Shieh and Jitendra Kumar Source Type: research