Interfacial SiO2 scavenging kinetics in HfO2 gate stack

In this paper, Si and oxygendiffusions as well as SiO2 reductionreaction in HfO2/SiO2/Si stacks are examined in detail for fully understanding the SiO2-IL scavenging process. A29Siisotope tracing experiment confirms that Si in SiO2-IL is mostly emitted from the HfO2 surface. In addition, thereaction of oxygen from SiO2 with VO in HfO2 is suggested. Furthermore, it is reported that the Si substrate is not changed at all in the SiO2-IL scavenging by simultaneously comparing a Si surface between with and without scavenged parts. Based on these results, a kineticmodel for the SiO2-IL scavenging in HfO2/SiO2/Si stacks is proposed.

Source: Applied Physics Letters - November 16, 2016 Category: Physics Authors: Xiuyan Li, Tomonori Nishimura and Akira Toriumi Source Type: research