High voltage breakdown (1.8  kV) of hydrogenated black diamond field effect transistor

We fabricated and characterized blackpolycrystallinediamondfield effect transistors. By implementing a C-H bonded channel with a wide gate-drain length up to 20  μm, a breakdown voltage of 1.8  kV was achieved, which is the highest value reported for adiamondfield effect transistor(FET) to date. Several of our devices achieved a breakdown voltage/wide gate-drain length ratio> 100 V/μm. This is comparable to the performance of lateral SiC and GaNFETs. We investigated the effects of voltage stress up to 2.0  kV, and showed that the maximumcurrent density fell to 26% of its initial value of 2.42  mA/mm before the device eventually broke down at 1.1 kV.

Source: Applied Physics Letters - November 16, 2016 Category: Physics Authors: M. Syamsul, Y. Kitabayashi, D. Matsumura, T. Saito, Y. Shintani and H. Kawarada Source Type: research