Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242  nm

We reportAlGaNnanowirelight emitting diodes(LEDs) operating in the ultraviolet-C band. TheLED structures are grown by molecular beam epitaxy on Si substrate. It is found that with the use of then+-GaN/Al/p+-AlGaN tunnel junction (TJ), the device resistance is reduced by one order of magnitude, and the light output power is increased by two orders of magnitude, compared toAlGaNnanowireLEDs without TJ. For unpackaged TJultravioletLEDs emitting at 242  nm, a maximum output power of 0.37 mW ismeasured, with a peak external quantum efficiency up to 0.012%.

Source: Applied Physics Letters - November 15, 2016 Category: Physics Authors: S. Zhao, S. M. Sadaf, S. Vanka, Y. Wang, R. Rashid and Z. Mi Source Type: research