High performance photodetector based on Pd-single layer MoS2 Schottky junction

Due to excellent photoelectric property of single layer molybdenum disulphide (SL MoS2), different kinds ofphotodetectors based on SL MoS2 have been reported. Although high photosensitivity was obtained, the rising and decay time ofphotocurrent were relatively large (>300  ms) when the current reached up toμA order. In this paper, we demonstrate a high sensitive and fast barrier typephotodetector based on Pd-SL MoS2Schottky junction. The photosensitivity can reach up to 0.88  A/W at 425 nm laser. Compared with SL MoS2photodetectors based onohmic contact, our device shows much shorter rising and a decay time of 24.7  ms and 24.5 ms, respectively, exhibiting the merit of barrier typephotodetector.
Source: Applied Physics Letters - Category: Physics Authors: Source Type: research
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