Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger

We report a significant off-state current reduction by an order of magnitude in the NbO2-based selectordevices by inserting an ultrathin TiO2 ( ∼2 nm)tunneling barrier. Moreover, the ultrathin TiO2 layer improves the reliability and uniformity of voltage-inducedinsulator-to-metal transition (IMT) in the NbO2 selectordevices by thermodynamically suppressing the formation of asurfaceNb2O5 layer. Our study suggests that the suitable combination oftunneling barrier and IMT materials can minimize the “off” current of IMT selectordevices and improve their applicability in high-density three dimensional cross point arraymemory devices.

Source: Applied Physics Letters - November 14, 2016 Category: Physics Authors: Minkook Kang and Junwoo Son Source Type: research