Defect formation in GaAs/GaNxAs1-x core/shell nanowires

Photoluminescence andoptically detected magnetic resonance(ODMR) spectroscopies are used to investigate the formation and role of defects in GaAs/GaNxAs1-x core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates.Galliumvacancies, which act as non-radiative recombination (NRR) centers, are identified byODMR. It is shown that the defects are formed in bulk regions, i.e., not on the surface, of the GaNAs shell and that their concentration increases with increasing nitrogen content. Temperature dependentphotoluminescence experiments reveal, on the other hand, suppressed thermal quenching of the near-band-edge emission with increasing [N]. This leads to the conclusion that the dominant NRR processes in the studied NWs are governed by surface defects, whereas the role ofgalliumvacancies in the observed thermally activated NRR is minor.

Source: Applied Physics Letters - November 14, 2016 Category: Physics Authors: J. E. Stehr, S. L. Chen, M. Jansson, F. Ishikawa, W. M. Chen and I. A. Buyanova Source Type: research