Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors

In this report, N+ion implantation of gatedielectric was conducted to modulate the threshold voltage of In2O3nanowireFET. Electrical measurements reveal that the threshold voltage can be reduced to as low as −2.0 V from the initial −23.2 V afterion implantation. This can be attributed to the effects ofimplantation induced electron traps. Moreover, it is found that the stability of threshold voltage can be improved byion implantation. This simple and convenient method indicates that gatedielectricion implantation may be a potential way to realize the low voltage operation and uniform In2O3nanowireFETs.

Source: Applied Physics Letters - November 11, 2016 Category: Physics Authors: Yang Yu, Wenqing Li, Pengcheng Wu, Changzhong Jiang and Xiangheng Xiao Source Type: research