An electrically pumped 239  nm AlGaN nanowire laser operating at room temperature

In this work, we report on the demonstration of an electrically injectedAlGaNnanowire laser operating at 239  nm at roomtemperature. Vertically aligned Al-richAlGaNnanowires are grown on Si substrate by plasma-assisted molecular beam epitaxy. It is observed that the randomly distributedAlGaNnanowires can strongly confinephotons in the deepultraviolet wavelength range, due to the recurrent multiple scattering of light and the inversely taperednanowire geometry. The laser exhibits a very low thresholdcurrent of 0.35  mA at roomtemperature. From the detailed rate equation analysis, thespontaneous emission coupling factor is derived to be around 0.012.

Source: Applied Physics Letters - November 9, 2016 Category: Physics Authors: S. Zhao, X. Liu, Y. Wu and Z. Mi Source Type: research