Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]
Source: Applied Physics Letters - Category: Physics Authors: Aiswarya Pradeepkumar, Neeraj Mishra, Atieh Ranjbar Kermany, John J. Boeckl, Jack Hellerstedt, Michael S. Fuhrer and Francesca Iacopi Source Type: research
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