Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

The channeltemperature (Tch) and thermal resistance (Rth) of Ga2O3metal-oxide-semiconductor field-effect transistors were investigated through electricalmeasurements complemented by electrothermal device simulations that incorporated experimental Ga2O3 thermal parameters. The analysis technique was based on a comparison between DC and pulsed drain currents (IDS) at known applied biases, where negligible self-heating under pulsed conditions enabled approximation ofTch to the ambienttemperature (Tamb) and hence correlation ofIDS toTch. Validation of the devicemodel was achieved throughcalibration against the DC data. The experimentalTch was in good agreement with simulations forTamb between 20  °C and 175 °C. A largeRth of 48  mm·K/W thus extracted at roomtemperature highlights the value of thermal analysis for understanding the degradation mechanisms and improving the reliability of Ga2O3 power devices.

Source: Applied Physics Letters - November 8, 2016 Category: Physics Authors: Man Hoi Wong, Yoji Morikawa, Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi and Masataka Higashiwaki Source Type: research