Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode

An electrically pumped ultravioletrandom laser based on an Au-ZnOnanowireSchottky junction on top of a SiO2/SiNxdistributed Bragg reflector(DBR) has been fabricated. Electrical characterization shows typicalSchottky diode current-voltage characteristics. Evident random lasing behavior is observed from electroluminescence measurement at room temperature. In comparison with a reference device having similarnanowire morphology but noDBR, this laser demonstrates almost 1.8 times reduction in threshold current and 4 times enhancement in output power. The performance enhancement originates from the incorporation of theDBR structure, which provides high reflectivity in the designed wavelength range.

Source: Applied Physics Letters - November 7, 2016 Category: Physics Authors: Sunayna B. Bashar, Mohammad Suja, Wenhao Shi and Jianlin Liu Source Type: research