Growth of continuous graphene by open roll-to-roll chemical vapor deposition

We demonstrate the growth of high-quality, continuousmonolayergraphene onCu foils using an open roll-to-roll (R2R) chemical vapor deposition(CVD) reactor with both static and moving foil growth conditions. N2 instead of Ar was used as carrier gas to reduce process cost, and the concentrations of H2 and CH4 reactants were kept below the lower explosive limit to ensure process safety for reactor ends open to ambient. Thecarrier mobility ofgraphene deposited at aCu foil winding speed of 5  mm/min was 5270–6040 cm2  V−1 s−1 at room temperature (on 50  μm  × 50 μm Hall devices). These results will enable the inline integration ofgrapheneCVD for industrial R2R production.
Source: Applied Physics Letters - Category: Physics Authors: Source Type: research
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