Highly-mismatched InAs/InSe heterojunction diodes

We report onheterojunction diodes prepared by exfoliation and direct mechanical transfer of ap-type InSe thin film onto ann-typeInAs epilayer. We show that despite the differentcrystal structures and large lattice mismatch ( ∼34%) of the component layers, thejunctions exhibitrectification behaviour withrectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visiblespectral ranges.

Source: Applied Physics Letters - November 4, 2016 Category: Physics Authors: A. V. Velichko, Z. R. Kudrynskyi, D. M. Di Paola, O. Makarovsky, M. Kesaria, A. Krier, I. C. Sandall, C. H. Tan, Z. D. Kovalyuk and A. Patan è Source Type: research